N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F MagnaChip MDF18N50BTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
Korea, Republic Of
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,732
Each (In a Tube of 5) (be PVM)
€ 2,096
Each (In a Tube of 5) (su PVM)
5
€ 1,732
Each (In a Tube of 5) (be PVM)
€ 2,096
Each (In a Tube of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 5 - 20 | € 1,732 | € 8,66 |
| 25 - 45 | € 1,522 | € 7,61 |
| 50 - 145 | € 1,312 | € 6,56 |
| 150 - 345 | € 1,26 | € 6,30 |
| 350+ | € 1,155 | € 5,78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Plotis
4.93mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
16.13mm
Kilmės šalis
Korea, Republic Of
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products