N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.93mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Aukštis
16.13mm
Forward Diode Voltage
1.4V
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,102
Each (In a Tube of 10) (be PVM)
€ 1,334
Each (In a Tube of 10) (su PVM)
10
€ 1,102
Each (In a Tube of 10) (be PVM)
€ 1,334
Each (In a Tube of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 10 - 40 | € 1,102 | € 11,02 |
| 50 - 90 | € 0,999 | € 9,99 |
| 100 - 240 | € 0,939 | € 9,39 |
| 250 - 490 | € 0,864 | € 8,64 |
| 500+ | € 0,796 | € 7,96 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
4.93mm
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Aukštis
16.13mm
Forward Diode Voltage
1.4V
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products