N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH

RS kodas: 871-6652Gamintojas: MagnaChipGamintojo kodas: MDD5N40RH
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

400 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

PRICED TO CLEAR

Yes

Aukštis

2.39mm

Kilmės šalis

China

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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€ 0,109

Each (In a Tube of 50) (be PVM)

€ 0,132

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH
sticker-462

€ 0,109

Each (In a Tube of 50) (be PVM)

€ 0,132

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

400 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

PRICED TO CLEAR

Yes

Aukštis

2.39mm

Kilmės šalis

China

Produkto aprašymas

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more