N-Channel MOSFET, 2.8 A, 500 V, 3-Pin DPAK MagnaChip MDD3N50GRH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Plotis
6.22mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
2.39mm
Kilmės šalis
China
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Patikrinkite dar kartą.
€ 0,427
Each (In a Tube of 50) (be PVM)
€ 0,517
Each (In a Tube of 50) (su PVM)
50
€ 0,427
Each (In a Tube of 50) (be PVM)
€ 0,517
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 200 | € 0,427 | € 21,37 |
| 250 - 950 | € 0,348 | € 17,38 |
| 1000 - 2450 | € 0,306 | € 15,28 |
| 2500+ | € 0,281 | € 14,07 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
6.75 nC @ 10 V
Plotis
6.22mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.4V
Aukštis
2.39mm
Kilmės šalis
China
Produkto aprašymas
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products