N-Channel MOSFET, 12.8 A, 100 V, 3-Pin DPAK MagnaChip MDD1903RH
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
2.39mm
Kilmės šalis
China
Produkto aprašymas
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
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€ 0,455
Each (On a Reel of 25) (be PVM)
€ 0,55
Each (On a Reel of 25) (su PVM)
25
€ 0,455
Each (On a Reel of 25) (be PVM)
€ 0,55
Each (On a Reel of 25) (su PVM)
25
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 25 - 100 | € 0,455 | € 11,37 |
| 125 - 475 | € 0,357 | € 8,92 |
| 500 - 1225 | € 0,315 | € 7,88 |
| 1250+ | € 0,29 | € 7,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
MagnaChipChannel Type
N
Maximum Continuous Drain Current
12.8 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
36.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
8.8 nC @ 10 V
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
2.39mm
Kilmės šalis
China
Produkto aprašymas
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products