N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH

RS kodas: 871-4895Gamintojas: MagnaChipGamintojo kodas: MDD1501RH
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Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

2.39mm

Kilmės šalis

Korea, Republic Of

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€ 0,332

Each (On a Reel of 25) (be PVM)

€ 0,402

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Pasirinkite pakuotės tipą
sticker-462

€ 0,332

Each (On a Reel of 25) (be PVM)

€ 0,402

Each (On a Reel of 25) (su PVM)

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
25 - 100€ 0,332€ 8,30
125 - 225€ 0,326€ 8,14
250 - 475€ 0,321€ 8,03
500 - 2975€ 0,317€ 7,93
3000+€ 0,314€ 7,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Aukštis

2.39mm

Kilmės šalis

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more