Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
9.65 x 10.29 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,732
Each (In a Pack of 5) (be PVM)
€ 2,096
Each (In a Pack of 5) (su PVM)
5
€ 1,732
Each (In a Pack of 5) (be PVM)
€ 2,096
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
5 - 45 | € 1,732 | € 8,66 |
50 - 95 | € 1,68 | € 8,40 |
100+ | € 1,628 | € 8,14 |
Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
500 V
Maximum Gate Emitter Voltage
500V
Maximum Power Dissipation
150 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
9.65 x 10.29 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.