Littelfuse NGB8207BNT4G IGBT, 20 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.29 x 9.65 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 0,639
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,773
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
5
€ 0,639
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,773
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.29 x 9.65 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products