IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
23
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 74,55
Each (In a Box of 6) (be PVM)
€ 90,206
Each (In a Box of 6) (su PVM)
6
€ 74,55
Each (In a Box of 6) (be PVM)
€ 90,206
Each (In a Box of 6) (su PVM)
6
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Dėžutė |
|---|---|---|
| 6 - 24 | € 74,55 | € 447,30 |
| 30 - 54 | € 69,30 | € 415,80 |
| 60+ | € 66,675 | € 400,05 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
23
Transistor Configuration
3 Phase
Matmenys
107.5 x 45 x 17mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products