IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Serija
GigaMOS, HiperFET
Pakuotės tipas
SMPD
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
23.25mm
Ilgis
25.25mm
Typical Gate Charge @ Vgs
590 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
5.7mm
Kilmės šalis
Germany
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 722,00
€ 36,10 Each (In a Tube of 20) (be PVM)
€ 873,62
€ 43,681 Each (In a Tube of 20) (su PVM)
20
€ 722,00
€ 36,10 Each (In a Tube of 20) (be PVM)
€ 873,62
€ 43,681 Each (In a Tube of 20) (su PVM)
20
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Serija
GigaMOS, HiperFET
Pakuotės tipas
SMPD
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Plotis
23.25mm
Ilgis
25.25mm
Typical Gate Charge @ Vgs
590 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
5.7mm
Kilmės šalis
Germany
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products