IXYS MIXA450PF1200TSF Dual IGBT Module, 650 A 1200 V, 11-Pin SimBus F, PCB Mount
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Pakuotės tipas
SimBus F
Configuration
Dual
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
11
Transistor Configuration
Series
Matmenys
152 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Germany
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 214,20
Each (In a Box of 3) (be PVM)
€ 259,182
Each (In a Box of 3) (su PVM)
3
€ 214,20
Each (In a Box of 3) (be PVM)
€ 259,182
Each (In a Box of 3) (su PVM)
3
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
650 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
2.1 kW
Pakuotės tipas
SimBus F
Configuration
Dual
Tvirtinimo tipas
PCB Mount
Channel Type
N
Kaiščių skaičius
11
Transistor Configuration
Series
Matmenys
152 x 62 x 17mm
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-40 °C
Kilmės šalis
Germany
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products