IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
Y3 DCB
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
110 x 62 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 149,10
Each (In a Box of 2) (be PVM)
€ 180,411
Each (In a Box of 2) (su PVM)
2
€ 149,10
Each (In a Box of 2) (be PVM)
€ 180,411
Each (In a Box of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Dėžutė |
|---|---|---|
| 2 - 8 | € 149,10 | € 298,20 |
| 10 - 18 | € 145,95 | € 291,90 |
| 20+ | € 141,75 | € 283,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
Y3 DCB
Configuration
Single
Tvirtinimo tipas
Panel Mount
Channel Type
N
Kaiščių skaičius
5
Transistor Configuration
Single
Matmenys
110 x 62 x 30mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products