N-Channel MOSFET, 37 A, 1000 V, 4-Pin SOT-227B IXYS IXFN44N100P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Pakuotės tipas
SOT-227B
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.07mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Aukštis
9.6mm
Serija
Polar HiPerFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Philippines
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 33,60
už 1 vnt. (be PVM)
€ 40,66
už 1 vnt. (su PVM)
1
€ 33,60
už 1 vnt. (be PVM)
€ 40,66
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 1 | € 33,60 |
| 2 - 4 | € 30,24 |
| 5 - 9 | € 28,88 |
| 10 - 14 | € 27,93 |
| 15+ | € 27,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
1000 V
Pakuotės tipas
SOT-227B
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
4
Maximum Drain Source Resistance
220 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
890 W
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
25.07mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
38.23mm
Typical Gate Charge @ Vgs
305 nC @ 10 V
Aukštis
9.6mm
Serija
Polar HiPerFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Philippines
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products