IXYS HiperFET, Q-Class N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Serija
HiperFET, Q-Class
Pakuotės tipas
TO-264AA
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.13mm
Transistor Material
Si
Ilgis
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
26.16mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 705,38
€ 28,215 Each (In a Tube of 25) (be PVM)
€ 853,51
€ 34,14 Each (In a Tube of 25) (su PVM)
25
€ 705,38
€ 28,215 Each (In a Tube of 25) (be PVM)
€ 853,51
€ 34,14 Each (In a Tube of 25) (su PVM)
25
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
27 A
Maximum Drain Source Voltage
800 V
Serija
HiperFET, Q-Class
Pakuotės tipas
TO-264AA
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
500 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
5.13mm
Transistor Material
Si
Ilgis
19.96mm
Typical Gate Charge @ Vgs
170 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Number of Elements per Chip
1
Aukštis
26.16mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Q Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products