N-Channel MOSFET, 44 A, 500 V, 3-Pin TO-247 IXYS IXFH44N50Q3
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Serija
HiperFET, Q3-Class
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Plotis
5.3mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
16.26mm
Kilmės šalis
United States
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 21,105
Each (In a Tube of 30) (be PVM)
€ 25,537
Each (In a Tube of 30) (su PVM)
30
€ 21,105
Each (In a Tube of 30) (be PVM)
€ 25,537
Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
500 V
Serija
HiperFET, Q3-Class
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.26mm
Typical Gate Charge @ Vgs
93 nC @ 10 V
Plotis
5.3mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
16.26mm
Kilmės šalis
United States
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products