N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-247 IXYS IXFH34N50P3
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
500 V
Serija
HiperFET, Polar3
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
695 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.26mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
United States
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 8,82
Each (In a Tube of 30) (be PVM)
€ 10,672
Each (In a Tube of 30) (su PVM)
30
€ 8,82
Each (In a Tube of 30) (be PVM)
€ 10,672
Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
500 V
Serija
HiperFET, Polar3
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
695 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.26mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Aukštis
21.46mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
United States
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products