IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P

RS kodas: 193-509PGamintojas: IXYSGamintojo kodas: IXFH170N10P
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Serija

HiperFET, Polar

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

198 nC @ 10 V

Plotis

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

16.26mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

21.46mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Sandėlio informacija laikinai nepasiekiama.

€ 58,42

€ 11,68 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 70,69

€ 14,13 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Pasirinkite pakuotės tipą
sticker-462

€ 58,42

€ 11,68 Už kiekviena vnt. (tiekiama tuboje) (be PVM)

€ 70,69

€ 14,13 Už kiekviena vnt. (tiekiama tuboje) (su PVM)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
5 - 19€ 11,68
20 - 49€ 11,12
50 - 99€ 8,55
100+€ 8,08

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Serija

HiperFET, Polar

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

198 nC @ 10 V

Plotis

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

16.26mm

Maksimali darbinė temperatūra

+175 °C

Aukštis

21.46mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more