IXYS HiperFET, Polar N-Channel MOSFET, 16 A, 500 V, 3-Pin TO-247 IXFH16N50P
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
16.26mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
43 nC @ 10 V
Plotis
5.3mm
Minimali darbinė temperatūra
-55 °C
Aukštis
21.46mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 28,50
€ 5,70 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 34,48
€ 6,90 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
5
€ 28,50
€ 5,70 Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 34,48
€ 6,90 Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 5 - 9 | € 5,70 |
| 10 - 14 | € 5,42 |
| 15 - 19 | € 5,04 |
| 20+ | € 4,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
TO-247
Serija
HiperFET, Polar
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
16.26mm
Maksimali darbinė temperatūra
+150 °C
Typical Gate Charge @ Vgs
43 nC @ 10 V
Plotis
5.3mm
Minimali darbinė temperatūra
-55 °C
Aukštis
21.46mm
Produkto aprašymas
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products