N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2

RS kodas: 146-4401Gamintojas: IXYSGamintojo kodas: IXFB150N65X2
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Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

PLUS264

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Aukštis

26.59mm

Serija

HiperFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

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€ 40,42

už 1 vnt. (be PVM)

€ 48,91

už 1 vnt. (su PVM)

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
sticker-462

€ 40,42

už 1 vnt. (be PVM)

€ 48,91

už 1 vnt. (su PVM)

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 40,42
5 - 9€ 32,34
10 - 24€ 31,50
25+€ 30,76

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

PLUS264

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Aukštis

26.59mm

Serija

HiperFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more