N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3

RS kodas: 146-4403Gamintojas: IXYSGamintojo kodas: IXFA80N25X3
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Plotis

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Aukštis

4.83mm

Serija

HiperFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 10,71

už 1 vnt. (be PVM)

€ 12,96

už 1 vnt. (su PVM)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
sticker-462

€ 10,71

už 1 vnt. (be PVM)

€ 12,96

už 1 vnt. (su PVM)

N-Channel MOSFET, 80 A, 250 V, 3-Pin D2PAK IXYS IXFA80N25X3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 4€ 10,71
5 - 9€ 9,14
10 - 24€ 8,72
25+€ 8,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

390 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.41mm

Typical Gate Charge @ Vgs

83 @ 10 V nC

Plotis

11.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.4V

Aukštis

4.83mm

Serija

HiperFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more