IXYS IXA60IF1200NA IGBT, 88 A 1200 V, 4-Pin SOT-227B, Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Pakuotės tipas
SOT-227B
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
38.23 x 25.25 x 9.6mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Kilmės šalis
United States
Produkto aprašymas
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 32,55
Each (In a Tube of 10) (be PVM)
€ 39,386
Each (In a Tube of 10) (su PVM)
10
€ 32,55
Each (In a Tube of 10) (be PVM)
€ 39,386
Each (In a Tube of 10) (su PVM)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Pakuotės tipas
SOT-227B
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
4
Transistor Configuration
Single
Matmenys
38.23 x 25.25 x 9.6mm
Minimali darbinė temperatūra
-40 °C
Maksimali darbinė temperatūra
+125 °C
Kilmės šalis
United States
Produkto aprašymas
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products