N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 International Rectifier IRLML2502TRPBF

RS kodas: 162-3274Gamintojas: International RectifierGamintojo kodas: IRLML2502TRPBF
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Serija

IRLML2502

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 0,138

Each (On a Reel of 3000) (be PVM)

€ 0,167

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 International Rectifier IRLML2502TRPBF
sticker-462

€ 0,138

Each (On a Reel of 3000) (be PVM)

€ 0,167

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 International Rectifier IRLML2502TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,138€ 412,65
6000 - 6000€ 0,13€ 390,60
9000+€ 0,123€ 368,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

20 V

Serija

IRLML2502

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

8 nC @ 5 V

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more