N-Channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-220 International Rectifier IRLIZ24N

RS kodas: 395-8801Gamintojas: International RectifierGamintojo kodas: IRLIZ24N
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

26 W

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

15 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.75mm

Plotis

4.83mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

9.8mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

P.O.A.

N-Channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-220 International Rectifier IRLIZ24N
sticker-462

P.O.A.

N-Channel MOSFET Transistor, 14 A, 55 V, 3-Pin TO-220 International Rectifier IRLIZ24N
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

26 W

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

15 nC @ 5 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.75mm

Plotis

4.83mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

9.8mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more