N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-247
Serija
CoolMOS C3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Plotis
5.16mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
21.1mm
Kilmės šalis
Germany
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 2,888
Each (In a Tube of 30) (be PVM)
€ 3,494
Each (In a Tube of 30) (su PVM)
30
€ 2,888
Each (In a Tube of 30) (be PVM)
€ 3,494
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 30 | € 2,888 | € 86,62 |
| 60 - 120 | € 2,835 | € 85,05 |
| 150 - 270 | € 2,73 | € 81,90 |
| 300+ | € 2,625 | € 78,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
800 V
Pakuotės tipas
TO-247
Serija
CoolMOS C3
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.03mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Plotis
5.16mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
21.1mm
Kilmės šalis
Germany
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products