N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Plotis
11.05mm
Transistor Material
Si
Serija
CoolMOS C3
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 4,75
Each (In a Pack of 2) (be PVM)
€ 5,748
Each (In a Pack of 2) (su PVM)
Standartas
2
€ 4,75
Each (In a Pack of 2) (be PVM)
€ 5,748
Each (In a Pack of 2) (su PVM)
Standartas
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 4,75 | € 9,50 |
| 10 - 48 | € 4,085 | € 8,17 |
| 50 - 98 | € 3,848 | € 7,70 |
| 100 - 248 | € 3,515 | € 7,03 |
| 250+ | € 3,372 | € 6,74 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
208 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.31mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Plotis
11.05mm
Transistor Material
Si
Serija
CoolMOS C3
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products