N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1

RS kodas: 171-1920Gamintojas: InfineonGamintojo kodas: SPA20N60C3XKSA1
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220 FP

Serija

SPA20N60C3

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Plotis

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Aukštis

16.15mm

Minimali darbinė temperatūra

-55 °C

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€ 5,67

Each (In a Pack of 2) (be PVM)

€ 6,861

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1
sticker-462

€ 5,67

Each (In a Pack of 2) (be PVM)

€ 6,861

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 20.7 A, 650 V, 3-Pin TO-220 FP Infineon SPA20N60C3XKSA1
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 8€ 5,67€ 11,34
10 - 18€ 5,46€ 10,92
20 - 48€ 4,882€ 9,76
50 - 98€ 4,41€ 8,82
100+€ 4,148€ 8,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.7 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220 FP

Serija

SPA20N60C3

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

34.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.65mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Plotis

4.85mm

Number of Elements per Chip

1

Forward Diode Voltage

0

Typical Power Gain

0

Aukštis

16.15mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more