N-Channel MOSFET, 2 A, 800 V, 3-Pin TO-220 Infineon SPA02N80C3XKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.85mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Plotis
4.85mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,467
Each (In a Pack of 10) (be PVM)
€ 0,565
Each (In a Pack of 10) (su PVM)
Standartas
10
€ 0,467
Each (In a Pack of 10) (be PVM)
€ 0,565
Each (In a Pack of 10) (su PVM)
Standartas
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Serija
CoolMOS™ C3
Pakuotės tipas
TO-220
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.85mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Plotis
4.85mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Aukštis
16.15mm
Produkto aprašymas
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products