Infineon SGD02N120 IGBT, 6.2 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
6.2 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
62 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.5 x 6.22 x 2.3mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
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P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
6.2 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
62 W
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
6.5 x 6.22 x 2.3mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products