N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF

RS kodas: 178-5089Gamintojas: InfineonGamintojo kodas: IRLR3410TRPBF
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

6.22mm

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

2.39mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,509

Each (On a Reel of 2000) (be PVM)

€ 0,616

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF
sticker-462

€ 0,509

Each (On a Reel of 2000) (be PVM)

€ 0,616

Each (On a Reel of 2000) (su PVM)

N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK Infineon IRLR3410TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

6.22mm

Number of Elements per Chip

1

Ilgis

6.73mm

Typical Gate Charge @ Vgs

34 nC @ 5 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

2.39mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more