N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK Infineon IRLR120NPBF

RS kodas: 178-1506Gamintojas: InfineonGamintojo kodas: IRLR120NPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Aukštis

2.39mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

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€ 1,021

Each (In a Tube of 75) (be PVM)

€ 1,235

Each (In a Tube of 75) (su PVM)

N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK Infineon IRLR120NPBF
sticker-462

€ 1,021

Each (In a Tube of 75) (be PVM)

€ 1,235

Each (In a Tube of 75) (su PVM)

N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK Infineon IRLR120NPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

185 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Aukštis

2.39mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more