Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
298 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
10.67mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
11.33mm
Typical Gate Charge @ Vgs
170 nC @ 4.5 V
Aukštis
4.83mm
Serija
StrongIRFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 5,565
Each (In a Pack of 2) (be PVM)
€ 6,734
Each (In a Pack of 2) (su PVM)
2
€ 5,565
Each (In a Pack of 2) (be PVM)
€ 6,734
Each (In a Pack of 2) (su PVM)
2
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
298 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
10.67mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
11.33mm
Typical Gate Charge @ Vgs
170 nC @ 4.5 V
Aukštis
4.83mm
Serija
StrongIRFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
StrongIRFET™ Logic-Level Power MOSFET, Infineon
An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low RDS(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.