N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF

RS kodas: 178-1463Gamintojas: InfineonGamintojo kodas: IRL520NSPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Aukštis

4.83mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

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€ 0,939

Each (In a Tube of 50) (be PVM)

€ 1,136

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF

50

Galima įsigyti kartotiną kiekį 50
50€ 46,94
100€ 93,87
150€ 140,80
200€ 187,74
250€ 234,68
300€ 281,61
350€ 328,54
400€ 375,48
450€ 422,42
500€ 469,35
550€ 516,28
600€ 563,22
650€ 610,16
700€ 657,09
750€ 704,02
sticker-462

€ 0,939

Each (In a Tube of 50) (be PVM)

€ 1,136

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF
Sandėlio informacija laikinai nepasiekiama.

50

Galima įsigyti kartotiną kiekį 50
50€ 46,94
100€ 93,87
150€ 140,80
200€ 187,74
250€ 234,68
300€ 281,61
350€ 328,54
400€ 375,48
450€ 422,42
500€ 469,35
550€ 516,28
600€ 563,22
650€ 610,16
700€ 657,09
750€ 704,02
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Aukštis

4.83mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more