N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF

RS kodas: 170-2241Gamintojas: InfineonGamintojo kodas: IRL3103PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

TO-220AB

Serija

IRL3103PbF

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

16 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.54mm

Typical Gate Charge @ Vgs

33 nC @ 4.5 V

Plotis

4.69mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

15.24mm

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€ 0,913

Each (In a Tube of 50) (be PVM)

€ 1,105

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF
sticker-462

€ 0,913

Each (In a Tube of 50) (be PVM)

€ 1,105

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 200€ 0,913€ 45,65
250 - 450€ 0,688€ 34,39
500+€ 0,601€ 30,07

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

TO-220AB

Serija

IRL3103PbF

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

16 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.54mm

Typical Gate Charge @ Vgs

33 nC @ 4.5 V

Plotis

4.69mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

15.24mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more