Infineon IRG4BC20KD-SPBF IGBT, 16 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.67 x 9.65 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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€ 2,362
Each (In a Tube of 50) (be PVM)
€ 2,858
Each (In a Tube of 50) (su PVM)
50
€ 2,362
Each (In a Tube of 50) (be PVM)
€ 2,858
Each (In a Tube of 50) (su PVM)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonMaximum Continuous Collector Current
16 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
10.67 x 9.65 x 4.83mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products