N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF

RS kodas: 541-0519Gamintojas: InfineonGamintojo kodas: IRFZ44ESPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Plotis

9.65mm

Transistor Material

Si

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

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Sandėlio informacija laikinai nepasiekiama.

€ 72,20

€ 72,20 1 Tube of 50 (be PVM)

€ 87,36

€ 87,36 1 Tube of 50 (su PVM)

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF
sticker-462

€ 72,20

€ 72,20 1 Tube of 50 (be PVM)

€ 87,36

€ 87,36 1 Tube of 50 (su PVM)

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

kiekisVieneto kaina
1 - 1€ 72,20
2 - 3€ 59,85
4 - 7€ 57,48
8 - 14€ 55,10
15+€ 50,35

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Plotis

9.65mm

Transistor Material

Si

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more