P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF

RS kodas: 178-1512Gamintojas: InfineonGamintojo kodas: IRFU5410PBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.39mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

6.22mm

Kilmės šalis

Mexico

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€ 0,947

Each (In a Tube of 75) (be PVM)

€ 1,146

Each (In a Tube of 75) (su PVM)

P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF
sticker-462

€ 0,947

Each (In a Tube of 75) (be PVM)

€ 1,146

Each (In a Tube of 75) (su PVM)

P-Channel MOSFET, 13 A, 100 V, 3-Pin IPAK Infineon IRFU5410PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
75 - 75€ 0,947€ 71,03
150 - 300€ 0,899€ 67,41
375+€ 0,81€ 60,72

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

205 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.39mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

6.73mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Aukštis

6.22mm

Kilmės šalis

Mexico

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more