N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF

RS kodas: 178-1489Gamintojas: InfineonGamintojo kodas: IRFP4710PBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

15.9mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

5.3mm

Number of Elements per Chip

1

Transistor Material

Si

Aukštis

20.3mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Mexico

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€ 3,412

Each (In a Tube of 50) (be PVM)

€ 4,129

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF
sticker-462

€ 3,412

Each (In a Tube of 50) (be PVM)

€ 4,129

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 3,412€ 170,62
100 - 200€ 3,255€ 162,75
250+€ 2,94€ 147,00

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

15.9mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Plotis

5.3mm

Number of Elements per Chip

1

Transistor Material

Si

Aukštis

20.3mm

Serija

HEXFET

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Mexico

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more