N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF

RS kodas: 170-2257Gamintojas: InfineonGamintojo kodas: IRFL4310TRPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

3.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.7mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Aukštis

1.8mm

Serija

IRFL4310PbF

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

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€ 0,418

Each (On a Reel of 2500) (be PVM)

€ 0,506

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF
sticker-462

€ 0,418

Each (On a Reel of 2500) (be PVM)

€ 0,506

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
2500 - 2500€ 0,418€ 1 044,75
5000+€ 0,396€ 989,62

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3 + Tab

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Plotis

3.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.7mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Aukštis

1.8mm

Serija

IRFL4310PbF

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more