N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB Infineon IRFB3607PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.66mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Plotis
4.82mm
Number of Elements per Chip
1
Aukštis
9.02mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 1,048
Each (In a Tube of 50) (be PVM)
€ 1,268
Each (In a Tube of 50) (su PVM)
50
€ 1,048
Each (In a Tube of 50) (be PVM)
€ 1,268
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,048 | € 52,40 |
| 100 - 200 | € 0,88 | € 44,00 |
| 250 - 450 | € 0,817 | € 40,84 |
| 500 - 1200 | € 0,765 | € 38,27 |
| 1250+ | € 0,702 | € 35,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
TO-220AB
Serija
HEXFET
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Ilgis
10.66mm
Typical Gate Charge @ Vgs
56 nC @ 10 V
Plotis
4.82mm
Number of Elements per Chip
1
Aukštis
9.02mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
Mexico
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products