N-Channel MOSFET, 210 A, 60 V, 3-Pin TO-220AB Infineon IRFB3206PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Serija
HEXFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Plotis
4.83mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.02mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Patikrinkite dar kartą.
€ 1,522
Each (In a Tube of 50) (be PVM)
€ 1,842
Each (In a Tube of 50) (su PVM)
50
€ 1,522
Each (In a Tube of 50) (be PVM)
€ 1,842
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,522 | € 76,12 |
| 100 - 200 | € 1,365 | € 68,25 |
| 250 - 450 | € 1,26 | € 63,00 |
| 500 - 950 | € 1,208 | € 60,38 |
| 1000+ | € 1,155 | € 57,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Serija
HEXFET
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Ilgis
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Plotis
4.83mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Aukštis
9.02mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products