N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

RS kodas: 170-2263Gamintojas: InfineonGamintojo kodas: IRF7807ZTRPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Plotis

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Serija

IRF7807ZPbF

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€ 0,287

Each (On a Reel of 4000) (be PVM)

€ 0,347

Each (On a Reel of 4000) (su PVM)

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF
sticker-462

€ 0,287

Each (On a Reel of 4000) (be PVM)

€ 0,347

Each (On a Reel of 4000) (su PVM)

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Plotis

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Serija

IRF7807ZPbF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more