N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF

RS kodas: 170-2265Gamintojas: InfineonGamintojo kodas: IRF7343TRPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Plotis

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

1.5mm

Serija

IRF7343PbF

Minimali darbinė temperatūra

-55 °C

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€ 0,469

Each (On a Reel of 4000) (be PVM)

€ 0,568

Each (On a Reel of 4000) (su PVM)

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF
sticker-462

€ 0,469

Each (On a Reel of 4000) (be PVM)

€ 0,568

Each (On a Reel of 4000) (su PVM)

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Pakuotės tipas

SO-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Plotis

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

1.5mm

Serija

IRF7343PbF

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more