N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217

RS kodas: 123-6145Gamintojas: InfineonGamintojo kodas: IRF60R217
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.73mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

7.49mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Aukštis

2.39mm

Serija

StrongIRFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 1,01

Each (In a Pack of 10) (be PVM)

€ 1,222

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217
Pasirinkite pakuotės tipą

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 10,10
20€ 20,20
30€ 30,30
40€ 40,40
50€ 50,50
60€ 60,61
70€ 70,71
80€ 80,81
90€ 90,91
100€ 101,01
110€ 111,11
120€ 121,21
130€ 131,31
140€ 141,41
150€ 151,52
sticker-462

€ 1,01

Each (In a Pack of 10) (be PVM)

€ 1,222

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 58 A, 60 V, 3-Pin DPAK Infineon IRF60R217
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą

Pasirinkite pakuotės tipą

Standartas - each

Galima įsigyti kartotiną kiekį 10.

Gamyba -

Galima įsigyti kartotiną kiekį 10.

Rekomenduojama užsakant dideliais kiekiais. Produktai supakuoti taip, kad juos būtų galima įdėti į mašinas, todėl galite padidinti gamybos efektyvumą.

10

Galima įsigyti kartotiną kiekį 10
10€ 10,10
20€ 20,20
30€ 30,30
40€ 40,40
50€ 50,50
60€ 60,61
70€ 70,71
80€ 80,81
90€ 90,91
100€ 101,01
110€ 111,11
120€ 121,21
130€ 131,31
140€ 141,41
150€ 151,52
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

6.73mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

7.49mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Aukštis

2.39mm

Serija

StrongIRFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more