N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF

RS kodas: 162-3302Gamintojas: InfineonGamintojo kodas: IRF3710ZSTRLPBF
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Serija

IRF3710ZS

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

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€ 1,68

Each (In a Pack of 10) (be PVM)

€ 2,033

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,68

Each (In a Pack of 10) (be PVM)

€ 2,033

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 1,68€ 16,80
50 - 90€ 1,418€ 14,18
100 - 240€ 1,312€ 13,12
250 - 490€ 1,26€ 12,60
500+€ 1,155€ 11,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Serija

IRF3710ZS

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more