N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Serija
IRF1407PbF
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Ilgis
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Plotis
4.83mm
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,612
Each (In a Pack of 5) (be PVM)
€ 3,161
Each (In a Pack of 5) (su PVM)
5
€ 2,612
Each (In a Pack of 5) (be PVM)
€ 3,161
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 20 | € 2,612 | € 13,06 |
| 25 - 45 | € 2,328 | € 11,64 |
| 50 - 120 | € 2,185 | € 10,92 |
| 125 - 245 | € 2,042 | € 10,21 |
| 250+ | € 1,90 | € 9,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Serija
IRF1407PbF
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Ilgis
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Plotis
4.83mm
Maksimali darbinė temperatūra
+175 °C
Number of Elements per Chip
1
Aukštis
16.51mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products