N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB Infineon IRF1407PBF
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
TO-220AB
Serija
IRF1407PbF
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Plotis
4.83mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
16.51mm
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,362
Each (In a Tube of 50) (be PVM)
€ 2,858
Each (In a Tube of 50) (su PVM)
50
€ 2,362
Each (In a Tube of 50) (be PVM)
€ 2,858
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 2,362 | € 118,12 |
| 100 - 200 | € 1,89 | € 94,50 |
| 250 - 450 | € 1,785 | € 89,25 |
| 500 - 950 | € 1,628 | € 81,38 |
| 1000+ | € 1,522 | € 76,12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Pakuotės tipas
TO-220AB
Serija
IRF1407PbF
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maksimali darbinė temperatūra
+175 °C
Ilgis
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Plotis
4.83mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
16.51mm
Forward Diode Voltage
1.3V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products