N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP

RS kodas: 162-3292Gamintojas: InfineonGamintojo kodas: IRF1010EZSTRLP
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Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Aukštis

4.83mm

Serija

IRF1010EZS

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

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€ 0,589

Each (In a Pack of 10) (be PVM)

€ 0,713

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP
Pasirinkite pakuotės tipą
sticker-462

€ 0,589

Each (In a Pack of 10) (be PVM)

€ 0,713

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Infineon

Channel Type

N

Maximum Continuous Drain Current

84 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Aukštis

4.83mm

Serija

IRF1010EZS

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more