N-Channel MOSFET, 43 A, 700 V, 3-Pin TO-247 Infineon IPW65R080CFDAFKSA1
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Serija
CoolMOS CFD
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.21mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 9,345
Each (In a Tube of 30) (be PVM)
€ 11,307
Each (In a Tube of 30) (su PVM)
30
€ 9,345
Each (In a Tube of 30) (be PVM)
€ 11,307
Each (In a Tube of 30) (su PVM)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
43 A
Maximum Drain Source Voltage
700 V
Serija
CoolMOS CFD
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
391 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Plotis
5.21mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
16.13mm
Typical Gate Charge @ Vgs
167 nC @ 10 V
Aukštis
21.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products