Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
700 V
Serija
CoolMOS C7
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
215 nC @ 10 V
Plotis
21.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Aukštis
5.21mm
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 21,28
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 25,75
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 21,28
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 25,75
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
Gamybinė pakuotė (Vamzdelis)
1
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 1 | € 21,28 |
2 - 4 | € 20,24 |
5 - 9 | € 19,38 |
10 - 24 | € 18,52 |
25+ | € 17,20 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
700 V
Serija
CoolMOS C7
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
215 nC @ 10 V
Plotis
21.1mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
0.9V
Aukštis
5.21mm
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.