Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ C6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
5.21mm
Ilgis
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
21.1mm
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 114,00
€ 3,80 Each (In a Tube of 30) (be PVM)
€ 137,94
€ 4,598 Each (In a Tube of 30) (su PVM)
30

€ 114,00
€ 3,80 Each (In a Tube of 30) (be PVM)
€ 137,94
€ 4,598 Each (In a Tube of 30) (su PVM)
30

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
30 - 30 | € 3,80 | € 114,00 |
60 - 120 | € 3,61 | € 108,30 |
150 - 270 | € 3,468 | € 104,02 |
300 - 570 | € 3,325 | € 99,75 |
600+ | € 3,088 | € 92,62 |
Techniniai dokumentai
Specifikacijos
Markė
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Serija
CoolMOS™ C6
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
176 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Plotis
5.21mm
Ilgis
16.13mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
21.1mm
Kilmės šalis
China
Produkto aprašymas
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.